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FDS6912 - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Description

These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • RDS(ON) = 0.028 Ω @ VGS = 10 V.
  • 6 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V.
  • Optimized for use in switching DC/DC converters with PWM controllers.
  • Very fast switching.
  • Low gate charge D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1a) Units V.

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Datasheet Details

Part number FDS6912
Manufacturer Fairchild Semiconductor
File Size 219.89 KB
Description Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Datasheet download datasheet FDS6912 Datasheet
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Full PDF Text Transcription

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FDS6912 January 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features RDS(ON) = 0.028 Ω @ VGS = 10 V • 6 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V. • Optimized for use in switching DC/DC converters with PWM controllers • Very fast switching.
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